Essential details
Shipping:Express delivery
Product Introduction
Technical principle: High energy laser beams (such as nanosecond/picosecond pulse lasers) are focused onto the surface of silicon wafers, and material evaporation or melting is achieved through instantaneous high temperature to complete cutting. The typical laser wavelength is 1.06 μm (semiconductor laser) or 1064nm (fiber laser).
Core advantages:
High precision: The cutting accuracy can reach ± 10 μm, and the width of the heat affected zone (HAZ) is less than 20 μm, significantly better than the ± 50 μm accuracy of mechanical cutting.
Non-contact processing: avoids the risk of cracking caused by mechanical stress, with a cutting yield of over 99.5%.
High speed: The cutting speed can reach 1200mm/s, and a single device can produce over 5000 pieces per day.
Core advantages:
High precision: The cutting accuracy can reach ± 10 μm, and the width of the heat affected zone (HAZ) is less than 20 μm, significantly better than the ± 50 μm accuracy of mechanical cutting.
Non-contact processing: avoids the risk of cracking caused by mechanical stress, with a cutting yield of over 99.5%.
High speed: The cutting speed can reach 1200mm/s, and a single device can produce over 5000 pieces per day.